| 摘要 |
PURPOSE:To obtain a structure of TFT whose stability and reproducibility of a characteristic is good and whose reliability is high by forming a back- channel transmutation layer which has transmuted the surface of i-layer amorphous silicon in a back-channel part between a source electrode and a drain electrode so as to contain at least one out of nitrogen, oxygen and carbon. CONSTITUTION:A gate electrode 20, a gate insulating film 30, an amorphous silicon film 40, a source electrode 60 and a drain electrode 70 are formed in this order on an insulating substrate 10. In this reverse staggered amorphous silicon thin-film transistor, a back-channel transmutation layer 90 which has positively transmuted the surface of the i-layer amorphous silicon 40 in a back- channel part 90 between the source electrode 60 and the drain electrode 70 so as to contain at least one out of nitrogen, oxygen, carbon and boron is formed. For example, said surface transmutation layer 80 is formed in such a way that one part of an n<+> layer and an i-layer of a-Si films in the back- channel part is exposed to an oxygen plasma inside the same apparatus without breaking a vacuum as a process following a dry etching operation when the part to be dug by the dry etching operation. |
