发明名称 |
Fabrication method of nanocrystals using a focused-ion beam |
摘要 |
Disclosed is a method for forming a nano-crystal. In the above method, there is prepared a substrate having a metal film or a semiconductor film formed thereon. A focused-ion beam is irradiated onto a plurality of positions on a surface of the metal film or the semiconductor film, whereby the metal film or the semiconductor film is removed at a focal portion of the focused-ion beam but an atomic bond in the metal film or the semiconductor film is broken at an overlapping region of the focused-ion beams due to an radiation effect of the focused-ion beam to form the nano-crystal. The method allows a few nm or less-sized nano-crystals to be formed with ease and simplicity using the focused-ion beam. As a result, the formed nano-crystals come to have a binding energy capable of restraining thermal fluctuation phenomenon at room temperature and thereby it becomes possible to fabricate a tunneling transistor capable of being operated at room temperature. Further, the invention contributes largely to a development of next generation ultra high density memory device with a memory capacitance of tera byte level or more.
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申请公布号 |
US6475886(B2) |
申请公布日期 |
2002.11.05 |
申请号 |
US20010025696 |
申请日期 |
2001.12.26 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
KIM EUN KYU;PARK YOUNG JU;KIM TAE WHAN;KANG SEUNG OUN;CHOO DONG CHUL;SHIM JAE HWAN |
分类号 |
C23C14/58;C30B13/24;C30B29/60;H01L21/265;H01L21/302;H01L21/425;H01L21/461;(IPC1-7):H01L21/425 |
主分类号 |
C23C14/58 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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