首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
EPITAXIAL GROWTH METHOD FOR III-V COMPOUND SEMICONDUCTOR
摘要
申请公布号
JPH01117020(A)
申请公布日期
1989.05.09
申请号
JP19870275163
申请日期
1987.10.29
申请人
NEC CORP
发明人
MISAKI TOSHIYUKI
分类号
H01L21/205
主分类号
H01L21/205
代理机构
代理人
主权项
地址
您可能感兴趣的专利
COLLAPSIBLE CANOPY WITH AUTO ERECT ROOF SUPPORT STRUCTURE.
REMAPPING DATABASE VECTORS TO DISCRETE PIXELS.
FRAMEWORK MEANS FOR COLLECTING PIECES OF A VARYING, UNSYMMETRICAL AND IRREGULAR FORM, PREFERABLY FROZEN ANIMAL CARCASSES.
SELF-EVACUATING BAG AND PROCESS FOR FILLING IT.
ADAPTIVE TRANSFORM CODER HAVING LONG TERM PREDICTOR.
BEAM SPLITTER FOR SPLITTING AN OPTICAL BEAM PATH.
Synergistic composition and method of selective weed control
DEVICE AND METHOD OF MANUFACTURING THE SAME; AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
HANDY TERMINAL
INFORMATION EQUIPMENT
DATA CONTROL SYSTEM
CHARACTER PROCESSOR CONTAINING RUBY CONVERTING FUNCTION
AUTOMATIC VENDING MACHINE SYSTEM
INFORMATION PROCESSOR
CHARACTER FONT ENLARGING AND DISPLAYING DEVICE
ELECTROPHOTOGRAPHIC DEVELOPING DEVICE
SILVER HALIDE PHOTOGRAPHIC SENSITIVE MATERIAL
THREE-DIMENSIONAL IMAGE REGENERATION DEVICE
TEMPERATURE CORRECTION METHOD FOR THERMOMECHANICAL ANALYSIS
FREQUENCY ANALYZER AND FREQUENCY DISPLAY DEVICE
