| 发明名称 |
DEVICE AND METHOD OF MANUFACTURING THE SAME; AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
An element which includes a first film containing no impurity particles due to spontaneous oxidization or residual resist at its surface, and an electrically conductive material layer formed on a surface in contact with the surface of said first film. On the surface of the electrically conductive material layer is formed an insulating compound film as a result of surface reaction with the electrically conductive material layer, and on the surface of said first film is formed a desired second film that is necessary for constituting the element. |
| 申请公布号 |
EP0463165(A4) |
申请公布日期 |
1992.03.11 |
| 申请号 |
EP19900913222 |
申请日期 |
1990.09.07 |
| 申请人 |
OHMI, TADAHIRO;CANON KABUSHIKI KAISHA |
发明人 |
OHMI, TADAHIRO;MIYAWAKI, MAMORU |
| 分类号 |
H01L29/73;H01L21/283;H01L21/316;H01L21/331;H01L21/336;H01L29/08;H01L29/10;H01L29/417;H01L29/423;H01L29/737;H01L29/78;(IPC1-7):H01L29/73;H01L21/302;H01L21/285;H01L29/784 |
主分类号 |
H01L29/73 |
| 代理机构 |
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