| 摘要 |
1. A VHF diode of the PIN type, comprising, supported on a silicon substrate which is not intentionally doped (= 10**12 at.cm**-3 ) and which constitutes the I zone (8), a first layer (9) of a first type of conductivity (P), and a second layer (10) of a second type of conductivity (N) on a second face of the substrate (8), said diode being characterized in that the said layers (9 and 10) are epitaxially formed on the substrate (8), the doping level by impurities in the layers (9 and 10) being constant for the entire thickness of the layer, and comprised between 5.10**16 and 5.10**18 at.cm**-3 , and in that the P-I transition between the P layer (9) and the I zone (8) and the I-N transition between the N layer (10) and the I zone (8) are abrupt transitions. |
