| 摘要 |
PURPOSE:To enable the formation of a polycrystalline thin film excellent in quality on a substrate large in area at a low temperature so as to obtain a solar cell at a low cost by a method wherein a high melting point metal thin film and a low melting point metal thick film are successively coated on the substrate, fine crystalline particles of semiconductor are deposited thereon, and moreover the substrate is heated at the temperature higher than a melting point of the low melting point metal and then gradually cooled. CONSTITUTION:A high melting point metal thin film 2 and a low melting point metal thick film 3 are successively coated on an insulating or a conductive substrate 1, and fine crystalline particles 4 are made to be deposited thereon. Thereafter, the substrate 1 is heated to be higher than the temperature of a melting point of the low melting point metal 2 and then gradually cooled. For instance, the thin film 2 of high melting point metal such as Mo or the like and the thick film 3 of low melting point metal such as Sn or the like are formed on the substrate 1, and the fine crystalline particles of Si are laminarly applied thereon to coat. Next, the substrate 1 is heated to 500 deg.C or so to enable not only the low melting point metal thick film to melt but also the fine crystalline particles to be fused to make a low melting point melt saturated with Si. Then, the substrate is made to decrease in temperature so as to grow a Si 6 epitaxially through each Si crystalline particles 4 employed as a nucleus for the formation of a polycrystalline Si film 7. |
