发明名称 FORMATION OF RESIST PATTERN
摘要 PURPOSE:To inhibit the increase of the thickness of an inter-layer film, and to obtain an excellent resist pattern by applying and forming a PMMA resist containing dyestuffs as a lower layer resist and applying the mixed solvent of PMMA containing no dyestuffs and hydrocarbon onto the PMMA resist. CONSTITUTION:When a resist pattern is formed, a polymethyl methacrylate(PMMA) resist containing dyestuffs is applied and shaped as a lower layer resist 12, and the mixed solvent of PMMA containing no dyestuffs and hydrocarbon is applied onto the PMMA resist 12 containing dyestuffs as an intermediate coating film 13. Consequently, inter-layers 14 are formed on the interface between an upper-layer positive type photo-resist 15 and the mixed solvent film 13 of PMMA 12 containing no dyestuffs and hydrocarbon. Accordingly, mutual mixing between both layers is inhibited, and the thickness of inter-layer 14 forming films is suppressed without damaging an effect acquired by including dyestuffs to the lower-layer PMMA resist 12 at all, thus allowing excellent patterning.
申请公布号 JPH01109723(A) 申请公布日期 1989.04.26
申请号 JP19870266636 申请日期 1987.10.23
申请人 OKI ELECTRIC IND CO LTD 发明人 TSUJII YASUE;ITO YOSHIO;HARADA DAIICHI
分类号 H01L21/027;G03C1/00;G03C5/00;G03F7/00;G03F7/095;G03F7/26;H01L21/30 主分类号 H01L21/027
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