| 摘要 |
PURPOSE:To facilitate production, by forming a main electrode on one main surface of a first semiconductor region of first-conductivity type, bringing the other main surface of the first semiconductor region into contact with a second semiconductor region of second-conductivity type, and forming a third semiconductor region of second-conductivity type on the other main surface of the first semiconductor region through a tunnel junction part selectively. CONSTITUTION:A main electrode 7 is formed on one main surface of a first semiconductor region 9 of first-conductivity type. The other main surface of the region 9 is brought into contact with a second semiconductor region 1 of second-conductivity type. A third semiconductor region 8 of second-conductivity type is formed on the other main surface of the region 9 through a tunnel junction part 10 selectively. Therefore, electrons in the second semiconductor region 1 are made to flow into the main electrode 7 through the third semiconductor region 8, the tunnel junction part 10, into which a small voltage is applied, and the first semiconductor region 9. Thus, the third semiconductor region 8 can be formed thinly, In this way, production becomes easy, and the yield rate and the quality are improved. |
