| 摘要 |
An atomic layer deposition(ALD) apparatus is provided to increase a purge effect by supplying a purge gas into an atomic layer deposition chamber process part, perform a purge process at a temperature required in an atomic layer deposition process by stably controlling temperature of the purge gas, and further reduce the volume of the high temperature gas supply part by forming a coil type inner gas line part in a high temperature gas supply part. An atomic layer deposition apparatus comprises: a chamber process part(100) for performing atomic layer deposition; a gas storage part(200) for storing gas to be supplied to the chamber process part; and a high temperature gas supply part(400) for heating the gas supplied from the gas storage part to the chamber process part to increase temperature of the gas to a temperature higher than room temperature. The high temperature gas supply part includes: a coil type gas line part(420) through which the gas supplied from the gas storage part flows; a heater(410) on which the coil type gas line part is wound to heat the gas flowing through the coil type gas line part; a box type external jacket part(430) containing the gas line part and the heater; and an insulating material(440) introduced into the external jacket part. The atomic layer deposition apparatus further comprises an external gas line(300) connected to the coil type gas line part by a swage lock.
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