| 摘要 |
PURPOSE:To make it possible to obtain high resolution in a magnetic encoder, by changing the thickness of a magnetoresistance effect element (MR element) in the longitudinal direction of the stripe of the element. CONSTITUTION:The thickness of an MR sensor stripe in the longitudinal direction is changed from one side to the other side. For example, a boron silicate glass substrate 1 is set in an electron beam evaporating apparatus. An 81% Ni-Fe film is formed at a speed of 10Angstrom /s under the state 300 deg.C is maintained. Patterning is performed by photolithography, and an MR element 2 is formed. The distribution of the film thickness is adjusted by changing the angle of the glass substrate 1 with respect to an evaporating source. The high resolution of a magnetic encoder can be implemented by changing the thickness of the thin film having the magnetoresistance effect in the longitudinal direction of the stripe. |
