| 摘要 |
PURPOSE:To obtain a boron nitride bulk product having a nonequilibrium metastable system under a pressure close to atmospheric temperature, by reacting a boron source raw material with a nitrogen source raw material in a high-temperature plasma chemical vapor deposition(CVD) apparatus. CONSTITUTION:A boron source raw material is reacted with a nitrogen source raw material in a high-temperature plasma CVD apparatus to afford the aimed boron nitride bulk product formed from a boron nitride material having a nonequilibrium metastable crystal system. The respective raw materials are gaseous and boron halide or boron hydride, etc., is used as the boron source raw material gas. Nitrogen or ammonia is used as the nitrogen source raw material gas. The high-temperature plasma under the total pressure close to atmospheric pressure has no difference in electron and gas temperatures by particle collision excitement with high reactivity. Since a process of quick heating-ultra-rapid cooling is utilized, a nonequilibrium metastable substance is readily obtained as a product. This metastable substance is the cubic, wurtzite, hexagonal, rhombohedral crystal system or a mixture thereof or amorphous. |
