| 摘要 |
PURPOSE: To prevent a device from being damaged due to overheat by simultaneously protecting a silicon integrated circuit CMOS inverter from both of latch-up and electrostatictic discharge (ESD). CONSTITUTION: A pair of diodes 3, 4 are respectively inserted between an input terminal and Vdd and between the input terminal and Vss in order to protect an input from excess positive or negative voltage ESD. The anode and cathod of the diode 3 are respectively connected to the input and the Vdd and the anode and cathode of the diode 4 are respectively connected to the Vss and the input. When excess negative voltage appears on the input, the diode 4 is turned to a bias state in the positive direction and forms a conductive path from the feeding souruce Vss to the input. The diode 3 formed of an integrated circuit constitutes distributed diodes 3,..., 3A, helps protection against an excess current inputted to an inverter by a series resistor 5 connected from the input in series and displays also a latch-up protection effect. |
