| 摘要 |
PURPOSE:To improve efficiency for emitting light by laminating n-type 6H-SiC layer and 6H-SiC layer on n-type 4H-SiC substrate in sequence. CONSTITUTION:Nitrogen-doped n-type 6H-SiC layer 22 and auminum-doped p-type 6H-SiC layer 23 are grown on an n-type 4H-SiC substrate in sequence. A groove 26 which reaches a substrate 21 from the surface of a p-type 6H-SiC layer 23 with a SiO2 film 24 as an etching. Then, a SiO2 film 24 is removed and a thermal oxidation SiO2 film 27 is formed on the front surface and side surface of p-type 6H-SiC layer 23, on the side surface on n-type 6H-SiC layer 22 and substrate 21, and on the inner surface of the groove 26. Then the SiO2 film 27 which is located on the front surface of the p-type 6H-SiC layer 23 which is separated by the groove 26 is partially removed by the photolithography technique. And ohmic first and second electrodes 29 and 30 consisting of Al-Si and Ni-Cr-Au are formed on the front surface of the p-type 6H-SiC layer 23 exposed from an opening 28 and on the rear surface of the substrate 21, respectively. |
