MANUFACTURE OF THIN FILM TRANSISTOR MATRIX PANEL

摘要

PURPOSE:To form in advance a base layer in a flat face having no step when an a-Si:H layer is formed by reacting the a-Si:H layer selectively with transition metal to form a lower electrode, and then removing the excess transition metal. CONSTITUTION:An a-Si:H layer 6 is formed on an insulating substrate 1, its desired part is selectively reacted with transition metal, and a lower electrode 2 made of silicide layer of transition metal is formed. Then, excess transition metal is removed, pixel electrodes and the electrode 2 made of source electrode connected thereto, and a base layer made of the layer 6 and flattened on its face are obtained. Thus, the part of the layer 6 is compounded to form the electrode 2, the flat base layer is thus formed, an a-Si:H layer 7, a gate insulating film 4 and an upper electrode 5 are formed thereon.