METHOD FOR DEVELOPING RESIST MATERIAL

摘要

PURPOSE:To enable formation of a high-resolution pattern by projecting a 1st wavelength beam through a reticle to a resist film on a substrate and subjecting the resist film to a development processing, then projecting a 2nd wavelength beam thereto in a prescribed gaseous atmosphere and subjecting the same to an etching treatment. CONSTITUTION:The resist film 3 is formed on the substrate and the 1st wavelength beam is projected through the reticle 2 to effect the decomposition reaction or low-molecular formation reaction (positive type) or curing reaction (negative type) of the high-molecular polymer existing in the exposed part of a resist material and thereafter, the resulted product 5 of reaction is selectively removed in the case of the positive type and the non-cured part is selectively removed in the case of the negative type. Etching is further executed by radical reaction using, for example, gaseous halogen 8. The high-resolution pattern is thereby obtd.