| 摘要 |
PURPOSE:To obtain a single crystal circuit of high-temperature superconductor, by forming a circuit by patterning an oxide superconductor film on the base, converting the circuit into single crystals by irradiation with laser beams, and converting the circuit into superconductor by supplying oxygen into the circuit single crystals. CONSTITUTION:The Si base 11 coated with SiO2 on its surface is coated with an oxide superconductor film 12. An etching mask is formed on the oxide superconductor film 12, the film is processed to form a circuit of oxide superconductor 13. Then, the circuit 13 is irradiated with laser beam on its surface to melt and cause chemical reactions to form crystallized zone 14. Laser beams are scanned along the circuit lines 13 to form the oxide superconductor circuit 15 of single crystal. The oxide superconductor circuit of single crystal is heat- treated at a temperature lower than the melting point as an oxygen gas is made to flow, gradually cooled down to give a high-temperature oxide superconductor circuit 16. |
