摘要 |
PURPOSE:To control film quality and to increase film-forming velocity by disposing a bell jar so as to be inscribed in a cylindrical cavity enclosed by a metallic mesh and a restrictor and regulating the position of the restrictor according to electric discharge so as to form a cavity resonator in another position. CONSTITUTION:This microwave plasma CVD apparatus is constituted of a treatment chamber 4, a plasma production chamber, a means of introducing a gas into the above plasma production chamber, and a microwave-introducing means for forming the gas into plasmic state. The above plasma production chamber constitutes a cavity enclosed by a metallic mesh 9 and a restrictor 15. A bell jar 13 inscribed in the above cavity is disposed in contact with the mesh 9. Then, the position of the restrictor 15 is freely adjusted according to electric discharge in the bell jar 13. |