| 摘要 |
[Problem] To provide a high-heat-resistance plasma-processing detection indicator having a color-change layer that changes color due to plasma processing, wherein plasma-processing-induced gasification of the color-change layer or scattering of the color-change layer in the form of fine waste is suppressed to such a level that electronic device characteristics are not affected. [Solution] A plasma processing detection indicator having a color-change layer that changes color due to plasma processing, wherein the color-change layer includes at least one element selected from the group consisting of Mo, W, Sn, V, Ce, Te, and Bi, and contains metal oxide fine particles having an average particle diameter of 50 μm or less. |
