| 摘要 |
<p>PURPOSE:To alter the rate of currents flowing in a memory cell and a dummy cell by connecting enhancement N-type FETs and depression N-type FETs in serial. CONSTITUTION:The depression N-type FET-D2, D3, D4 and D5 which have respec tively ion-implanted are connected with enhancement N-type FET-N2, N3, N4 and N5 in serial. Thus, the rate of the currents flowing in the memory cell and the dummy cell can be altered to 1/3. On the other hand, the current rates of respective cells become 1/2 when ion-implantation is not executed on D5, but on D2-D4.</p> |
