Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogen

摘要

A method for manufacturing a group III nitride crystal on a seed crystal in a holding vessel holding therein a melt containing a group III metal, an alkali metal and nitrogen. The manufacturing method comprises the steps of causing the seed crystal to make a contact with the melt, setting an environment of the seed crystal to a first state offset from a crystal growth condition while in a state in which said seed crystal is in contact with the melt, increasing a nitrogen concentration in the melt, and setting the environment of the seed crystal to a second state suitable for crystal growth when the nitrogen concentration of the melt has reached a concentration suitable for growing the seed crystal.

主权项

1. A method for manufacturing a group III nitride crystal in a holding vessel holding a melt containing a group III metal, an alkali meta and nitrogen, comprising the steps of:
raising a temperature of said melt from room temperature to a crystal growth temperature: dissolving nitrogen into said melt at the crystal growth temperature and a crystal growth pressure: increasing a nitrogen concentration to a concentration level at which nucleation takes place to produce junk crystals: contacting a seed crystal with said melt when a nitrogen concentration in said melt is stabilized as a result of the nucleation; and growing the group III nitride crystal onto said seed crystal.