METHOD OF PRODUCING AT LEAST ONE THIN-FILM FIELD-EFFECT TRANSISTOR , AND TRANSISTOR OBTAINED

摘要

The invention relates to a method for the manufacture of thin film field effect transistors of the type having self-alignment of the electrodes and obtained on an insulating substrate. The method comprises two constructional variants making it possible to produce a submicron gate electrode determining a minimum channel length. The invention is applicable to the field of large surface or area microelectronics and in particular to the control and addressing of a flat liquid crystal screen or an image sensor.