| 摘要 |
PURPOSE:To obtain the result of monitoring of the pattern early by a method wherein light is irradiated to a light-transmitting thin board, on which the semiconductor pattern is formed, approximately vertically from an upper section, the transmitted light is detected, the data of said transmitted light is compared with a standard data, and the presence of a defect is detected. CONSTITUTION:The pattern 1 in polysilicon is formed onto the light-transmitting quartz thin board 7, and light 9 is irradiated vertically from the upper section and transmitted light is detected by a photodetector 8. Irradiated light 9 is scanned to the polysilicon pattern 1. An acceptable or defective chip can be decided rapidly by comparing the data of detected transmitted light with a data memorized to the detector. |
