| 摘要 |
PURPOSE:To obtain a buried type hetero structural semiconductor laser device of easy manufacture and excellent reproducibility by performing the entrapment of light in a transverse direction by a method wherein an active region is formed into a quantum well type layer wherein two kinds of compound semiconductor thin films are alternately laminated to three layers or more, and the upper and lower sides, right and left sides of this active region are changed respectively into those of composition larger than the average compositions of two kinds of semiconductor and those diffused with zinc thereto. CONSTITUTION:A Ga1-xAlxAs layer 2 is formed on a substrate crystal 1 of GaAs, etc., and two compound semiconductor ultrathin films 5 and 6 of different compositions having the thickness of 30-100Angstrom are alternately laminated thereon to three layers or more, resulting in the formation of a multiple lamination 3. A semi-insulating Ga1-xAlxAs layer 4 is formed thereon. For such semi-insulation layers 2 and 4, semiconductors of composition larger than that of the average composition of the semiconductors which compose the multiple lamination 3 is used. An SiO2 film is adhered on the upper surface of this semi- insulation layer 4, the SiO2 film is removed except at the center of the active region, and zinc is diffused so as to reach the semi- insulation layer 2 with the SiO2 film 7 as the mask. Of the multiple lamination 3, a zinc diffused region 8 has the disappearance of lamination state, therefore into the average composition of the two semiconductors, and then the multiple lamination of no diffusion of zinc at the center functions as the active region 9. |
