发明名称 Semiconductor circuit device.
摘要 <p>A system providing a drive circuit for a bipolar transistor (2; 51, 52) high in speed and low in power consumption even under a low source voltage using a MOSFET (3; 53, 54) is disclosed. The base current of the bipolar transistor (2; 51, 52) is supplied not by shortcircuiting the collector and the base thereof by a MOSFET (3; 53, 54) but from another base current source.</p>
申请公布号 EP0311083(A2) 申请公布日期 1989.04.12
申请号 EP19880116579 申请日期 1988.10.06
申请人 HITACHI, LTD. 发明人 AKIOKA, TAKASHI;WATANABE, ATSUO;NAGANO, TAKAHIRO
分类号 H03K17/04;H03K17/00;H03K17/0412;H03K17/567;H03K19/08;H03K19/0944 主分类号 H03K17/04
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