发明名称 |
Semiconductor circuit device. |
摘要 |
<p>A system providing a drive circuit for a bipolar transistor (2; 51, 52) high in speed and low in power consumption even under a low source voltage using a MOSFET (3; 53, 54) is disclosed. The base current of the bipolar transistor (2; 51, 52) is supplied not by shortcircuiting the collector and the base thereof by a MOSFET (3; 53, 54) but from another base current source.</p> |
申请公布号 |
EP0311083(A2) |
申请公布日期 |
1989.04.12 |
申请号 |
EP19880116579 |
申请日期 |
1988.10.06 |
申请人 |
HITACHI, LTD. |
发明人 |
AKIOKA, TAKASHI;WATANABE, ATSUO;NAGANO, TAKAHIRO |
分类号 |
H03K17/04;H03K17/00;H03K17/0412;H03K17/567;H03K19/08;H03K19/0944 |
主分类号 |
H03K17/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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