发明名称 Photoresist composition and method for forming a metal pattern
摘要 A method of forming a metal pattern is disclosed. In the method, a metal layer is formed on a base substrate. A photoresist composition is coated on the metal layer to form a coating layer. The photoresist composition includes a binder resin, a photo-sensitizer and a mixed solvent including a first solvent, a second solvent having a higher volatility than the first solvent, and a third solvent having a higher volatility than the second solvent. The coating layer is exposed to light. The coating layer is partially removed to form a photoresist pattern. The metal layer is patterned by using the photoresist pattern as a mask.
申请公布号 US9417521(B2) 申请公布日期 2016.08.16
申请号 US201313911984 申请日期 2013.06.06
申请人 Samsung Display Co., Ltd. 发明人 Cho Ki-Hyun;Kang Hoon;Kim Jae-Sung;Kim Dong-Min;Kim Seung-Ki;Jeagal Eun
分类号 G03F7/004;G03F7/40;G03F7/038;G03F7/016;G03F7/022;G03F7/039;G03F7/09;G03F7/16;G03F7/30;G03F7/36;G03F7/38 主分类号 G03F7/004
代理机构 Innovation Counsel LLP 代理人 Innovation Counsel LLP
主权项 1. A photoresist composition comprising: a binder resin; a photo-sensitizer; and a mixed solvent including a first solvent, a second solvent having a higher volatility than the first solvent, and a third solvent having a higher volatility than the second solvent, wherein the first solvent consists of propylene glycol monomethyl ether acetate, the second solvent consists of propylene glycol monomethyl ether, and the third solvent consists of n-propyl acetate, and wherein the mixed solvent comprises about 30% to about 70% by weight of the first solvent, about 10% to about 50% by weight of the second solvent and about 10% to about 50% by weight of the third solvent based on a total weight of the mixed solvent, wherein the mixed solvent further comprises at least one selected from the group consisting of glycol ethers, ethylene glycol alkyl ether acetates and diethylene glycols, of which a volatility is different with the first solvent, the second solvent and the third solvent.
地址 KR