发明名称 Polycrystalline silicon wafer tray
摘要 A polycrystalline silicon wafer having the step of flowing in a predetermined atmosphere molten liquid of silicon base material on a rotating fabrication tray toward a radial direction by means of a centrifugal force produced by the rotation of the tray, thereby forming a thin molten material layer of desired diameter with the molten liquid and solidifying the molten material, comprising a cover, at which a through hole is perforated at the ceiling wall thereof, detachably covered on the tray, a wafer-molding space formed to be surrounded by the cover and the tray, the molten material being filled in the wafer-molding space via the through hole to form a thin molten material layer. Thus, the wafers can be simultaneously formed without production of small projections of the surface of the wafers.
申请公布号 US4820145(A) 申请公布日期 1989.04.11
申请号 US19860926131 申请日期 1986.11.03
申请人 HOXAN CORPORATION 发明人 YOKOYAMA, TAKASHI;HIDE, ICHIRO;SAWAYA, KEIJI;MATSUYAMA, TAKESHI
分类号 C30B11/00;C30B11/10;(IPC1-7):A01J21/00 主分类号 C30B11/00
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