| 摘要 |
PURPOSE:To prevent increase in leak current and reduce an ineffective area, by splitting an a-Si film and a metal electrode film thereon by a laser beam which is focussed on the a-Si film on a substrate and by crystallizing the a-Si film by a high frequency laser beam to perform element connection. CONSTITUTION:After forming a transparent conductive layer of SnO2 on a glass substrate 1 by sputtering, a transparent electrodes 21-25 are formed by a YAG laser beam. An a-Si film 3 with a PIN junction is formed by a plasma CVD method and an aluminum film 4 is formed by sputtering. A YAG laser beam is applied so as to be focussed on the a-Si film 3 from the glass substrate side to linearly remove the a-Si film 3 and Al film 4 to make gaps 51-54. Thus a-Si film areas 31-35 and metal electrode patterns 41-45 are formed. Laser beam scanning line is then shifted about 30mum and a-Si film areas 61-64 are scanned with a laser output of 2W and Q frequency of 6KHz. The area 61-64 are turned to crystallites with low resistance, connecting metal electrodes 41-44 to respective transparent electrodes 22-25. |
