发明名称 |
METHOD OF FORMING A METALLIC SILICIDE |
摘要 |
<p>A method of forming a metallic silicide on silicon or polysilicon in which a masking layer such as silicon dioxide is formed on a silicon slice and patterned to expose selected areas of the slice surface. The slice is then sputter etched followed by in situ deposition of a metal layer. The slice is heated to convert the portion of the metal layer in contact with the silicon and/or polysilicon to a metal silicide, then the non-converted metal is removed by a selective etchant. According to another embodiment of the invention a titanium layer is deposited and reacted in an ambient including nitrogen to prevent the out-diffusion of silicon through the TiSi2 and titanium layers.</p> |
申请公布号 |
EP0128304(B1) |
申请公布日期 |
1989.03.29 |
申请号 |
EP19840104198 |
申请日期 |
1984.04.13 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
LAU, CHI KWAN |
分类号 |
C23C14/02;C23C14/06;C23C14/58;H01L21/28;H01L21/285;H01L21/3205;H01L23/52;(IPC1-7):H01L21/285 |
主分类号 |
C23C14/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|