| 摘要 |
<p>A chemical vapor deposition apparatus includes a reaction tube, a substrate-holder installed in the reaction tube (7), the substrate-holder (6) holding a plurality of substrates in a vertical direction, surfaces of the substrates being held horizontally, a rotating-means for rotating the substrate-holder, a heating-means (13) for heating the substrates, a first gas-supply nozzle tube (9) installed vertically in the reaction tube, the first gas-supply nozzle tube having a first vertical gas-emission line of a plurality of first gas-emission holes aligned in a vertical direction, and a second gas-supply nozzle tube (8) installed vertically in the reaction tube, the second gas-supply nozzle tube having a second vertical gas-emission line, a plurality of second gas-emission holes (10) aligned in a vertical direction, a first gas-emitting-axis of the first gas-emission holes intersecting with a second gas-emitting-axis of the second gas-emission holes at a first intersection over the substrate, the first intersection of the first and second gas-emitting axes being deviated from the rotation center of the substrate-holder.</p> |
