| 摘要 |
PURPOSE:To reduce a leakage current and to improve characteristics of a semiconductor laser by forming the layer of a buried hetero structure semiconductor laser by organic metal vapor growth. CONSTITUTION:An organic metal vapor growth and an MOVPE growth are conducted, for example, under reduced pressure of 76Torr, and growing temperature is set to approx. 625 deg.C. As a first growth, an InP buffer layer 2, an InGaAsP active layer 3 and an InP clad layer 4 are continuously grown on an InP substrate 1, and a DH structure is formed. After an SiN film is formed by plasma CVD on the surface, an SiN film remains in a stripe state in a direction (110), and with the film as a mask it is selectively etched to the substrate 1 with an etchant to form a vertical mesa on the side face (-100). Then, as a second growth, an InGaAsP turn ON preventive semiconductor layer 11, an InP current blocking layer 13 and an InP current blocking layer 13 are continuously buried and grown. After the SiN film on the mesa is removed, as a third growth an InP clad layer 21 and an InGaAsP cap layer 22 are grown on a whole surface. |
