发明名称 PIEZOELECTRIC BODY MONOCRYSTAL WAFER AND ITS MANUFACTURE
摘要 PURPOSE:To prevent the generation of a local deep linear flaw to be the cause of a processing distortion layer and a crack by making one surface of a piezoelectric body mono-crystal wafer into a mirror grinding surface, making other surface into a coarse surface by sandblasting, etching the surface of a suitable coarse surface to several microns or below and removing it. CONSTITUTION:A wafer 1 obtained by slicing a piezoelectric body monocrystal pool generates a thickness nonuniformity and a nonuniform unevenness. This is made into the double surface wrapping and the double surface is made into the parallel plane. Next, when a coarse surface 2 due to the sandblasting is formed on one surface, the wrap is generated due to the difference in the distortion of the double surface, and therefore, this is suitably etched and a distortion is removed. Next, other surface is mirror-ground and a mirror 3 is formed. The mirror grinding is executed, the mirror 3 is formed and a protecting film 4 such as seal wax is covered. Next, the coarse surface 2 due to the sandblasting is formed on the other surface, etching is executed suitably and the warp is removed. Next, the protecting film 4 is removed.
申请公布号 JPS6482814(A) 申请公布日期 1989.03.28
申请号 JP19870240510 申请日期 1987.09.25
申请人 SHIN ETSU CHEM CO LTD;MIMASU HANDOTAI KOGYO KK 发明人 OGIWARA MASAHIRO;KIUCHI ETSUO;SATO MAKOTO
分类号 H01L21/304;H01L21/306;H01L41/22;H03H3/08 主分类号 H01L21/304
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