| 摘要 |
PURPOSE:To enable alignment of gate electrodes with an excellent accuracy by sticking and forming the metal which is difficult to receive deformation by heat treatment in the time of ohmic electrode formation in a mark pattern for EB in which a position detecting mark is simultaneously formed with a pattern for ohmic electrodes. CONSTITUTION:A first resist film 2 is formed on a semiconductor substrate 1 and openings 3, 4 for an ohmic electrode formation and a mark pattern formation for EB are simultaneously formed therewith. A metal film 5 is deposited on a semiconductor substrate 1 through the openings 3, 4 by masking a resist film 2. An unnecessary metal film 5 and a resist film 2 are removed by lift-off method, and the pattern 6 for an ohmic electrode and the mark pattern 7 for EB are formed. After a substrate 1 is covered by a second resist film 8 and the opening including the mark pattern 7 for EB is provided, the metal difficult to deform by heat treatment is deposited as a second metal film 10 and a mark 11 for EB is formed by lift-off method. Ohmic electrodes 12 are formed by performing treatment on a semiconductor substrate. Alignment is performed for the ohmic electrodes by utilizing the mark 11 for EB and the gate electrodes are formed. |
