| 摘要 |
<p>PURPOSE:To prevent a soft light from generative by necessarily controlling the control electrode of a memory cell array not to write and the controlled electrode of a memory transistor at the time of writing. CONSTITUTION:Word wires W1, W2... are provided over plural such as two sets of memory cell arrays 1A and 1B, in which a double insulation type FET is made into the memory transistor. At the time of the writing into the array 1A, etc., the control electrode output form a control terminal 14 through an inverter 15 becomes an L, and it does not output a high voltage from a high voltage supplying circuit 11B for the writing of the array 1B not to write. Consequently, the high voltage is not supplied through FET 10B1, 10B2... whose bases are connected with selected word wires W1, W2..., to the bases of controlled electrodes of memory cells FET 3B1-1-3B1-8, 3B2-1-3B2-8.... At the same time, FET 13B1, 13B2... are turned off, and bit wires 13B1, 13B2... to be connected with the drains of the controlled electrodes of the FET 3B1-1-3B1-8, 3B2-1-3B2-8... are made into a floating condition, a current does not flow, and the soft light can be prevented from being generated.</p> |
