| 摘要 |
PURPOSE:To decrease the probability of the trapping of holes and to suppress the deterioration in detecting efficiency due to deterioration of energy resolution, missing counts and the like, by reducing the electrode on the side of anode smaller than that of a cathode, and increasing the intensity of an electric field. CONSTITUTION:Au is evaporated uniformly on one surface of a CdTe crystal semiconductor substrate 1 and an electrode 2 on the side of a cathode is formed. An Au anode 3 is formed so that its area is smaller than that on the side of the cathode. A voltage V is applied across the electrodes 2 and 3 through a resistor R. A semiconductor radiation detecting element D1, in which the cathode side electrode 2 is the input side of the radiation, is constituted. As the generating position of electrons and holes approaches the anode side electrode 3, not only the electrons but also the holes receive the effect of an intense electric field, and the moving speed of the electrons and the holes becomes quick. The probability of trapping of the electrons and the holes due to impurity levels, lattice defect levels and the like in the semiconductor substrate 1 is decreased. When electrode 33 is divided into a matrix pattern and a detecting element D3 is formed, the equivalent action is carried out.
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