| 摘要 |
<p>PURPOSE:To attain a highly reliable storing action by stopping the supplying of a high voltage to a block when a leak to some a cell in the self-block occurs. CONSTITUTION:In a memory cell array 1, cells are divided into units of prescribed number of pieces that are made blocks B1-Bk, high-voltage lines 31-3k are allocated respectively to these blocks B1-Bk, and to each of these lines 31-3k, each of the high-voltage supply circuits 41-4k supplies a high voltage VHH from a high-voltage generation circuit 2 separately. The circuits 41-4k are made stop supplying the high voltage to a block when a leak to a cell in the self-block occurs. As a result, a leak to a cell in any one of the blocks does not influence cells in other blocks even if it actually occurs, hence the cells in other blocks can execute a complete action of storing data.</p> |
