| 摘要 |
<p>A semiconductor laser of the double hetero-junction type having a current-limiting buried blocking layer (14) (DCPBH laser). According to the invention, a second active layer (5) and an additional passive layer (4) are provided above the first active layer (3). As a result, the threshold current required for laser effect has become less strongly dependent upon temperature. At the same time, the radiation intensity versus current strength characteristic of the laser according to the invention above the threshold current is substantially straight without the presence of "kinks".</p> |
