发明名称 SEMICONDUCTOR DEVICE COMPRISING AN INSULATING WIRING SUBSTRATE AND METHOD OF MANUFACTURING IT
摘要 A semiconductor device has an IC chip (4) mounted in a hole (3) in a tape carrier substrate (1). The terminals of the IC chip (4) are bonded to some of the leads (8,9) of the wiring pattern on the substrate(s), which leads (8,9) extend into the hole (3). Barrier portions (11), being formed from wide parts of the leads (8,9) and other parts of the wiring substantially surround the hole (3) with a predetermined spacing (G1) therefrom. The barrier portions (11) limit the flow during heat treatment of protective resin material which is applied to cover the IC chip (3) and adjacent parts of the substrate (1). By limiting that flow, before coagulation of the resin, the layer of protective material may be made flat.
申请公布号 EP0246893(A3) 申请公布日期 1989.03.22
申请号 EP19870304519 申请日期 1987.05.21
申请人 HITACHI, LTD. 发明人 MIYAMOTO, KEIJI;SATOH, TSUNEO;NAKAMURA, ATSUSHI;KOJIMA, KAZUO;MORITA, MASAYUKI
分类号 G06K19/077;H01L23/498;H01L23/538;(IPC1-7):H01L23/48;H01L23/52 主分类号 G06K19/077
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