| 摘要 |
PURPOSE:To improve integration and programming speed by providing a group of word wires which commonly connect control gate out of memory transistor group which is connected between neighboring bit wires in column direction. CONSTITUTION:A bit wire group 3 including bit wires Bi (i=1-5) in column direction, a memory transistor group Qi (i=1-12) with floating gates Gi (i=1-12) where source and drain are connected between neighboring bit wires, and the first and second word wire groups 1 and 2 where control gates are commonly connected in row direction out of memory transistor group are provided. Operation memory transistor, for example a transistor Q3, is selected by performing program write and read, giving signal to a bit wire B2 and B3 as well as a word wire W12. In this manner, integration can be improved and programming speed can be improved. |
