| 摘要 |
PURPOSE:To prevent a metal electrode layer during a manufacturing process from corroding by a combination of conventional techniques not by any technique which is difficult to be realized by forming a closed circuit including photoelectric conversion elements of a photoelectric conversion device so as not to generate a potential difference between both electrode layers of the element in the process of manufacturing the device. CONSTITUTION:When at least a photoelectric conversion layer 2 and two electrode layers 3, 4 are laminated on a substrate 1 to manufacture a photoelectric converter DA1 through the processes of forming photoelectric converter element D1, a closed circuit including the element D1 is so formed on the substrate 1 as not to generate a potential difference between the layers 3 and 4 of the element D1 in the processes of manufacturing the converter DA1. For example, an electrode layer 3 made of a thin Cr film, terminals T3, T4 and a connector 6 are simultaneously formed by a photolithography technique on the insulating substrate 1. Then, an amorphous silicon PIN layer of the layer 2 and the electrode layer 4 made of In2O2 are sequentially formed in this order thereon, and a closed circuit C including two photoelectric converter element arrays DA1, DA2 is formed as shown. |
