SEMICONDUCTOR DEVICE HAVING AN INCREASED BREAKDOWN VOLTAGE

摘要

A semiconductor device has a surface zone which forms a planar pn junction with the surrounding substrate, this pn junction being biased in operation in the reverse direction. In order to increase the breakdown voltage, one or more floating zones are located beside the pn junction within the range of the depletion zone, which also form planar pn junctions with the substrate. According to the invention, the floating zones have an overall doping of at least 3x1011 and at most 5x1012 atoms/cm2, as a result of which they are substantially depleted at a high reverse voltage.