MANUFACTURE OF TANTALUM OXIDE THIN FILM

摘要

PURPOSE:To assure a high dielectric thin film having excellent insulating properties by doping the thin film with a group IV element in the periodic table after formation of the same by ion implantation. CONSTITUTION:A metal thin film 7 is deposited on a Si substrate 1 through a contact hole so as to extend to a peripheral insulating film 6. The thin film 7 is patterned into the configurations of electrodes and the like using a conventional photolithography process, on which tantalum oxide 8 is formed by a CVD technique. The formed tantalum is ion-implanted with Ti and Si. This yields the tantalum oxide 8 involving the group IV elements in the tantalum, assuring the tantalum 8 having excellent insulating properties.