发明名称 |
Method for forming semiconductor crystal and semiconductor crystal article obtained by said method. |
摘要 |
<p>Semiconductor crystals are formed by applying a semiconductor crystal forming treatment on a substrate having a free surface on which a deposition surface (SNDS) with a small nucleation density and a deposition surface (SNDL) with metal having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (NDL) than the nucleation density (NDS) of the deposition surface (SNDS) are arranged adjacent to each other, thereby growing a semiconductor single crystal from the single nucleus.</p> |
申请公布号 |
EP0307109(A1) |
申请公布日期 |
1989.03.15 |
申请号 |
EP19880307842 |
申请日期 |
1988.08.24 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
YAMAGATA, KENJI;KUMOMI, HIDEYA;TOKUNAGA, HIROYUKI;ARAO, KOZO |
分类号 |
C30B25/02;C30B25/18;H01L21/20;H01L27/142;H01L31/0352;H01L31/18;(IPC1-7):H01L21/20 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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