发明名称 Method for forming semiconductor crystal and semiconductor crystal article obtained by said method.
摘要 <p>Semiconductor crystals are formed by applying a semiconductor crystal forming treatment on a substrate having a free surface on which a deposition surface (SNDS) with a small nucleation density and a deposition surface (SNDL) with metal having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (NDL) than the nucleation density (NDS) of the deposition surface (SNDS) are arranged adjacent to each other, thereby growing a semiconductor single crystal from the single nucleus.</p>
申请公布号 EP0307109(A1) 申请公布日期 1989.03.15
申请号 EP19880307842 申请日期 1988.08.24
申请人 CANON KABUSHIKI KAISHA 发明人 YAMAGATA, KENJI;KUMOMI, HIDEYA;TOKUNAGA, HIROYUKI;ARAO, KOZO
分类号 C30B25/02;C30B25/18;H01L21/20;H01L27/142;H01L31/0352;H01L31/18;(IPC1-7):H01L21/20 主分类号 C30B25/02
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