| 发明名称 |
Semiconductor device |
| 摘要 |
A semiconductor device includes a first insulation film formed on a monocrystalline substrate and having an opening, a monocrystalline semiconductor layer formed so as to protrude into the first insulation film, and a conductive layer formed in contact with the side section of the monocrystalline semiconductor layer and extending over a second insulation film formed on the monocrystalline semiconductor layer.
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| 申请公布号 |
US4812894(A) |
申请公布日期 |
1989.03.14 |
| 申请号 |
US19880191761 |
申请日期 |
1988.05.03 |
| 申请人 |
HITACHI, LTD. |
发明人 |
NAKAMURA, TOHRU;NAKAZATO, KAZUO;HOMMA, NORIYUKI;SAGARA, KAZUHIKO;SHIBA, TAKEO;KURE, TOKUO;HAYASHIDA, TETSUYA |
| 分类号 |
H01L29/73;H01L21/331;H01L21/337;H01L21/822;H01L23/485;H01L27/04;H01L27/06;H01L29/08;H01L29/10;H01L29/41;H01L29/417;H01L29/423;H01L29/732;H01L29/808;(IPC1-7):H01L29/06 |
主分类号 |
H01L29/73 |
| 代理机构 |
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