发明名称 |
High voltage detecting circuit |
摘要 |
A high voltage detecting circuit included in a semiconductor device having terminals for generating a control signal in order to start a specific mode of the semiconductor device when a potential of a specific mode signal higher by a predetermined value than a normal input voltage having a predetermined range is applied to at least one of the terminals of the semiconductor device. The high voltage detecting circuit comprises a level shift means having an input end and an output end and connected between a blocking transistor and a discrimination circuit for obtaining a potential of the output end lower by a level shift valve than a potential of the input end. Consequently, the high voltage detecing circuit will not generate an error control signal even if the semiconductor device is switched ON and a power line potential of the device is gradually increased while a normal mode signal of the normal input voltage is continuously applied to the terminal of the semiconductor device.
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申请公布号 |
US4812680(A) |
申请公布日期 |
1989.03.14 |
申请号 |
US19870027936 |
申请日期 |
1987.03.19 |
申请人 |
FUJITSU LIMITED |
发明人 |
KAWASHIMA, HIROMI;TAKEUCHI, ATSUSHI |
分类号 |
H03K5/153;G01R19/00;G01R19/165;G01R31/317;H01L27/06;H03K17/22;(IPC1-7):H03K5/153;H03K5/24 |
主分类号 |
H03K5/153 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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