发明名称 High voltage detecting circuit
摘要 A high voltage detecting circuit included in a semiconductor device having terminals for generating a control signal in order to start a specific mode of the semiconductor device when a potential of a specific mode signal higher by a predetermined value than a normal input voltage having a predetermined range is applied to at least one of the terminals of the semiconductor device. The high voltage detecting circuit comprises a level shift means having an input end and an output end and connected between a blocking transistor and a discrimination circuit for obtaining a potential of the output end lower by a level shift valve than a potential of the input end. Consequently, the high voltage detecing circuit will not generate an error control signal even if the semiconductor device is switched ON and a power line potential of the device is gradually increased while a normal mode signal of the normal input voltage is continuously applied to the terminal of the semiconductor device.
申请公布号 US4812680(A) 申请公布日期 1989.03.14
申请号 US19870027936 申请日期 1987.03.19
申请人 FUJITSU LIMITED 发明人 KAWASHIMA, HIROMI;TAKEUCHI, ATSUSHI
分类号 H03K5/153;G01R19/00;G01R19/165;G01R31/317;H01L27/06;H03K17/22;(IPC1-7):H03K5/153;H03K5/24 主分类号 H03K5/153
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