发明名称 |
DYNAMIC RANDOM ACCESS MEMORY HAVING SEPARATED VOLTAGE TERMINAL PADS, FOR IMPROVED BURN-IN, METHODS FOR MANUFACTURING AND TESTING SUCH MEMORY |
摘要 |
A random access memory, a method of manufacturing a random access memory, and a method of testing a random access memory in which separate operating voltage terminal pads are provided for the memory cell arrays and peripheral circuits of the memory. By providing separate operating voltage terminal pads, different operating voltages can be applied to the array of cells and the peripheral circuits during a burn-in procedure. In this manner, the burn-in procedure is greatly accelerated without danger of damage to the peripheral circuits due to exceeding the sustaining voltages of the transistor devices of the peripheral circuits during burn-in. |
申请公布号 |
DE3379129(D1) |
申请公布日期 |
1989.03.09 |
申请号 |
DE19833379129 |
申请日期 |
1983.11.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KASPRZAK, LUCIAN ALEXANDER;RYAN, CHARLES TIMOTHY;SCHEUERLEIN, ROY EDWIN |
分类号 |
G11C29/00;G01R31/28;G11C29/48;G11C29/50;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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