| 摘要 |
<p>An improved LCMOS display device employing a silicon-on-insulator (SOI) substrate (41) having an epitaxial silicon layer (15) lying over an implant-generated dielectric layer (13). MOS device and capacitor elements (17, 19, 21) used to activate the display are formed and interconnected in the epitaxial silicon (15). The implant-generated dielectric layer (13) and underlying silicon substrate (41) also serve as capacitor elements, thereby simplifying the structure and fabrication of the display device and providing improved operation through improved isolation of the MOS device elements formed in the epitaxial silicon (15) from the substrate (41).</p> |
