| 摘要 |
<p>PURPOSE:To obtain a small light emitting spot and a high optical fiber coupling light output by a method wherein a stripe-shape light emitting region is provided in an LED and the stripe width is gradually narrowed toward the light emitting end. CONSTITUTION:An n-type InP layer 12, a p-type InGaAsP active layer 13, a p-type InP layer 14 and a p-type InGaAsP contact layer 15 are successively built up on a semiconductor substrate 11 by an epitaxial method. Then the epitaxial layers are partially removed by etching to form a stripe-shape light emitting region 16. At that time, the stripe width is gradually narrowed toward the light emitting end 17. Therefore, a light guided in the light emitting region 16 while it is receiving a gain is emitted from the light emitting end 17 as a small light emitting spot. With this constitution, the coupling efficiency with an optical fiber can be improved and a high optical fiber coupling light output can be obtained.</p> |
