发明名称 Liquid-phase-epitaxy deposition method in the manufacture of devices
摘要 Epitaxial layers are grown from a body of molten material which includes flux and layer constituent components; included in the flux are lead oxide and a small amount of boron trioxide. As compared with prior-art processing in the absence of boron trioxide, enhanced yield is realized as believed to be due to reduced adhesion of solidifying material entrained upon withdrawal of a substrate after growth. The method is particularly useful in the manufacture of magnetic domain devices designed to operate at extreme temperatures, as well as in the manufacture of magneto-optic devices such as, e.g., switches, modulators, and isolators.
申请公布号 US4810325(A) 申请公布日期 1989.03.07
申请号 US19870062039 申请日期 1987.06.15
申请人 AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABS 发明人 LICHT, STEVEN J.
分类号 C30B19/02;G11C11/14;H01F41/28;H01L21/368;(IPC1-7):H01L21/20 主分类号 C30B19/02
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