| 摘要 |
PURPOSE:To obtain a high voltage upright field effect transistor large in a surge voltage withstand and small in 'on' resistance by a method wherein an opposite conductivity type well which is provided to the edge of one conductivity type low specific resistance region so as to surround an active region and form a pn junction in combination with the one conductivity type low specific resistance region and a drain electrode are provided. CONSTITUTION:A p base region 4 and a p well 5 are made to be in contact with an n-type low specific resistance region 3 of an n-type semiconductor to form pn junctions 5JB and 5J respectively, and a reverse breakdown strength of the pn junction 5J on the peripheral section side of the low specific resistance region is generally smaller than that of the pn junction 5JB on the inside due to the peripheral effect. Therefore, an adventitious surge voltage impressed between a drain electrode and a source electrode is absorbed in the ring-like pn junction 5J. And, the n-type low specific resistance region 3 surrounds the p base region 4, so that a transistor is made to be low in 'on' resistance. |
