| 摘要 |
PURPOSE:To allow excellent crystallization as well as to attempt stabilization while restraining both deterioration in properties caused by thermal strain and the reaction of a substrate with a superconductor under high temperature by forming a layer of ZrO2 as an intermediate electric insulating layer on the substrate, and forming the thin film of the superconductor made of a composite oxide in a specific Ln-M-Cu-O series on said intermediate electric insulating layer. CONSTITUTION:In a superconducting element of a thin film type on the thin film of whose substrate a superconductor is formed, a layer of ZrO2 is formed as in intermediate electric insulating layer 2 on the substrate 1. Furthermore, the thin film 3 of the superconductor constituted by LnM2O7-k is formed (Herein, Ln shall be at least one kind of rare earth elements such as La, Nd, Pm, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu and Y; M shall be at least one kind of Ba, Sr and Ca; (k) shall be greater than '0' but smaller than '1'). Owing to this constitution, the superconductor is finely crystallized on the crystal film of ZrO2. And since the coefficient of thermal expansion of the superconductor is about equal to that of ZrO2, thermal stresses will hardly be incurred in the thin film. Furthermore, there is no problem either of reactions taking place between the substrate and the superconductor under high temperature, and excellent superconducting properties can thereby be stably obtained. |
